#1(intel INVESTOR MEETING 2014 William Holt Executive Vice President General Manager, Technology and Manufacturing Group#2Key Messages from 2013 Intel Continues to Deliver the Benefits of Moore's Law True Cost Reduction Remains Possible in a Capital Intensive Environment The Benefits of Technology Apply Across the Product Portfolio#3Increasing Yield Increasing Matching 22 здата May June. Yield at the same point in development July 22nm 14nm OCT 14nm Status - 2013 Jan Aug Sept Yield rapidly increasing, on track for matched yield in Q1 '14* Feo Key Parameter Matching % of key process parameters meeting 3-sigma targets at the same point in development 22nm 14nm Weeks 14 nm key process parameter matching on track with 22 nm trend Module Switching Energy Change (%) 225% Source: Intel. * Forecast 175% 125% 75% 25% 14 -25% -75% Transistor Interconnect Thermo- Performance Improvement Switching Energy vs. Gate Delay -30% Mechanical/Moisture Test Vehicle Yield ESD/LU Alpha Particle/Soft Error -10% 30% 10% Delay Change (%) Reliability Scorecard at the same point in development 22nm (2 year offset) 50% 14nm 22nm 14nm 70% Low risk Meeting all cert goals Medium risk Close to meeting goals High risk Not yet meeting all goals, needs additional work Generally healthy reliability at this stage, on track for Q1 '14 certification *#4Increasing Yield Increasing Matching 22 fa May June Yield at the same point in development IN 22nm 14nm 14nm Status - 2014 July Aug Yield is now in healthy range with further improvements coming Sept Jan Mar Key Parameter Matching % of key process parameters meeting 3-sigma targets at the same point in development Apr 22nm 14nm Weeks 14 nm key process parameter matching on track with 22 nm trend May Jun Source: Intel Module Switching Energy Change (%) 225% 175% 125% 75% 25% 14 -25% -75% Transistor Interconnect Thermo- Performance Improvement Switching Energy vs. Gate Delay -30% -10% Mechanical/Moisture Test Vehicle Yield ESD/LU Alpha Particle/Soft Error 30% 10% Delay Change (%) Reliability Scorecard at the same point in development 22nm (2 year offset) 14nm 50% 14nm PRQ achieved Q2 2014 22nm 14nm 70% Low risk Meeting all cert goals Medium risk Close to meeting goals High risk Not yet meeting all goals, needs additional work#514 nm Product Yield Is In Healthy Range Increasing Yield 14nm Broadwell Yield Trend 22 nm 14 nm q PRQ Broadwell SoC Q1 '14 Q2 '14 22 nm data are shifted to align date of lead product qual Depicts relative health, lines not to scale 22nm Is Intel's Highest Yielding Process Ever Q3 '14 Forecast Q4 '14 Source: Intel Q1 '15#614nm Technology Overview A True 14 nm Technology 2nd Generation FinFET 52 nm Interconnect Pitch First Use of Air Gaps#7Intel Has Developed a True 14 nm Technology Transistor Fin Pitch Transistor Gate Pitch Interconnect Pitch 22 nm Node 60 90 80 nm 14 nm Node 42 70 52 nm Scale .70x .78x .65x#8SRAM Memory Cells 22 nm Process .108 um² (Used on CPU products) 14 nm Process LEH 1 .0588 um² (0.54x area scaling) 14 nm Design Rules + 2nd Generation Tri-gate Transistor Provides Industry-leading SRAM Density#934 nm height Transistor Fin Improvement 60 nm pitch Si Substrate 22 nm Process Si Substrate STARK 14 nm Process#1034 nm height Transistor Fin Improvement 60 nm pitch Si Substrate 22 nm Process I 42 nm pitch Si Substrate HTURK 14 nm Process Tighter Fin Pitch for Improved Density#1134 nm height Transistor Fin Improvement 60 nm pitch 42 nm pitch Si Substrate 22 nm Process www Si Substrate HTURK 14 nm Process 42 nm height Taller and Thinner Fins for Increased Drive Current and Performance#1234 nm height Transistor Fin Improvement 60 nm pitch Si Substrate I 42 nm pitch Si Substrate 42 nm height 22 nm Process 14 nm Process Reduced Number of Fins for Improved Density and Lower Capacitance#13Transistor Fin Improvement Metal Gate — Si Substrate 22 nm 1st Generation Tri-gate Transistor Metal Gate M Si Substrate 14 nm 2nd Generation Tri-gate Transistor#14Transistor Fin Improvement M 22 nm 1st Generation Tri-gate Transistor Source: Intel 14 nm 2nd Generation Tri-gate Transistor#15(intel) TSMC GlobalFoundries Samsung IBM Intel Transistor Leadership '03 ¹04 '05 ¹06 SiGe Strained Silicon RENCON 3 Years VORODEN '07 '08 '09 $10 '11 High-k Metal Gate Peale SiGe Strained Silicon EMOTER 3.5 Years ¹03 ¹04 ¹05 ¹06 '07 '08 '09 $10 *Other names and brands may be claimed as the property of others. Source: Dates are based on start of high volume production.. Projected dates are based on other company public statements. $12 $13 Tri-Gate '11 $12 High-k Metal Gate $14 ~3.5 Years $13 M $14 $15 $16 $17 $18 Tri-Gate $15 $16 Projected ¹17 $18#16Performance 2x SHOW 1x DOWY 2nd Generation Tri-Gate is the Critical Enabler Performance 45 nm 32 nm 22 nm Generation 14 nm Server Laptop Mobile 1x .25x Active Power (Includes performance increase) 32 nm Generation Active Power Reduced 45 nm 22 nm 14 nm Source: Intel Server Laptop Mobile 10x 1x THAT Performance per Watt 45 nm Intel Core M processor > 2X 32 nm 22 nm Generation Performance per Watt Improves Performance Improved 14 nm BDW-Y Delivers >2x Improvement in Performance per Watt Server Laptop Mobile 14 nm#17B 22 nm Process Interconnects B 80 nm minimum pitch 7 Source: Intel VICE 14 nm Process [ 52 nm (0.65x) minimum pitch 52 nm Interconnect Pitch Provides Better-than-normal Interconnect Scaling#18B 22 nm Process Interconnects B 80 nm minimum pitch 7 Source: Intel VICE 14 nm Process 6140 20070 52 nm (0.65x) minimum pitch 52 nm Interconnect Pitch Provides Better-than-normal Interconnect Scaling#19B 22 nm Process Interconnects B 7 14 nm Process 0 20070 00000 52 nm (0.65x) minimum pitch 80 nm minimum pitch 52 nm Interconnect Pitch Provides Better-than-normal Interconnect Scaling First Use of Air Gaps to Improve Interconnect Performance Source: Intel#20Logic Cell Height Gate Pitch Gate Pitch Logic Cell Width Metal Pitch (nm2) ||| TIL Metal Pitch 10000 1000 Logic Area Scaling Trend (Publicly available scaling information) 45 nm Planar 2007 2008 45 nm Planar 32 nm Planar 2009 Intel 2010 28 nm Planar 22 nm Tri-gate Others 20 nm Planar 14 nm Tri-gate 2011 2012 2013 Start of Volume Production 2014 "16/14 nm" Tri-gate Projected 2015 "10 nm" Tri-gate 2016 2017 Source: Intel data from shipping products Others based on published information: 45nm: K-L Cheng (TSMC), 2007 IEDM, p. 243 28nm: F. Arnaud (IBM alliance), 2009 IEDM, p. 651 20nm: H. Shang (IBM alliance), 2012 VLSI, p. 129 16nm: S. Wu (TSMC), 2013 IEDM, p. 224 10nm: K-I Seo (IBM alliance), 2014 VLSI, p. 14 2018#2114nm Enables Cost and Performance Benefits Haswell 2 X 2 (22mm) 960M Transistors 35% More Transistors B HEMOME T 37% Smaller Broadwell 2 X 2 (14nm) 1.3B transistors ¹ Intel® Core™ M-5Y70 processor compared to Intel® Core™ i5-4302Y processor Broadwell delivers: 2.2x increase in transistor density Up to 40% better 3D graphics perf¹ Enables <9mm fanless designs Industry's First 14 nm Processor in Volume Production#22Source: Intel A Forecast 0.13 um 90 nm 65 nm 45 nm 32 nm 22 nm 14 nm 10 nm* 0.13 um 90 nm 65 nm 45 nm 32 nm 22 nm 14 nm 10 nm* 0.01 Normalized Capital Growth ($/mm²) 0.01 10 X Normalized Area/Transistor Growth (mm²/transistor) 0.1 Normalized Cost per Transistor ($/transistor) CAT 100 0.1 1 $/mm² mm²/transistor $/transistor Cost Reduction On Track#23Source: Intel A Forecast 0.13 um 90 nm 65 nm 45 nm 32 nm 22 nm 14 nm 10 nm* 0.13 um 90 nm 65 nm 45 nm 32 nm 22 nm 14 nm 10 nm* 7 nm* 0.01 Normalized Capital Growth ($/mm²) 0.01 10 X Normalized Area/Transistor Growth (mm²/transistor) 0.1 Normalized Cost per Transistor ($/transistor) CAT 100 0.1 1 $/mm² mm²/transistor $/transistor Cost Reduction On Track#24Summary Intel Continues to Deliver Moore's Law True Cost Reduction Remains Possible Technology Enables Real Product Improvements#25Legal Disclaimers Software and workloads used in performance tests may have been optimized for performance only on Intel microprocessors. Performance tests, such as SYSmark and MobileMark, are measured using specific computer systems, components, software, operations and functions. Any change to any of those factors may cause the résults to vary. You should consult other information and performance tests to assist you in fully evaluating your contemplated purchases, including the performance of that product when combined with other products. Intel technologies may require enabled hardware, specific software, or services activation. Check with your system manufacturer or retailer. Tests document performance of components on a particular test, in specific systems. Differences in hardware, software, or configuration will affect actual performance. Consult other sources of information to evaluate performance as you consider your purchase. For more complete information about performance and benchmark results, visit http://www.intel.com/benchmarks All dates, forecasts and products specified in this presentation are subject to change without notice. This presentation will not be updated to reflect any such changes. Copyright 2014 Intel Corporation. *Other names and brands may be claimed as the property of others.#26Risk Factors The statements in the presentations and other commentary that refer to plans and expectations for the fourth quarter, the year and the future are forward-looking statements that involve a number of risks and uncertainties. Words such as "anticipates," "expects," "intends," "plans," "believes," "seeks," "estimates," "may," "will," "should" and their variations identify forward-looking statements. Statements that refer to or are based on projections, uncertain events or assumptions also identify forward-looking statements. Many factors could affect Intel's actual results, and variances from Intel's current expectations regarding such factors could cause actual results to differ materially from those expressed in these forward-looking statements. Intel presently considers the following to be important factors that could cause actual results to differ materially from the company's expectations. + + + Demand for Intel's products is highly variable and could differ from Intel's expectations due to factors including changes in the business and economic conditions; consumer confidence or income levels; customer acceptance of Intel's and competitors' products; competitive and pricing pressures, including actions taken by competitors; supply constraints and other disruptions affecting customers; changes in customer order patterns including order cancellations; and changes in the level of inventory at customers. + Intel's gross margin percentage could vary significantly from expectations based on capacity utilization; variations in inventory valuation, including variations related to the timing of qualifying products for sale; changes in revenue levels; segment product mix; the timing and execution of the manufacturing ramp and associated costs; excess or obsolete inventory; changes in unit costs; defects or disruptions in the supply of materials or resources; and product manufacturing quality/yields. Variations in gross margin may also be caused by the timing of Intel product introductions and related expenses, including marketing expenses, and Intel's ability to respond quickly to technological developments and to introduce new features into existing products, which may result in restructuring and asset impairment charges. Intel operates in highly competitive industries and its operations have high costs that are either fixed or difficult to reduce in the short term. The declaration and rate of dividend payments and the amount and timing of Intel's stock buyback program are at the discretion of Intel's board of directors, and plans for future dividends and stock buy backs and could be affected by changes in Intel's priorities for the use of cash, such as operational spending, capital spending, acquisitions, and because of changes to Intel's cash flows and changes in tax laws. Intel's expected tax rate is based on current tax law and current expected income and may be affected by the jurisdictions in which profits are determined to be eamed and taxed; changes in the estimates of credits, benefits and deductions; the resolution of issues arising from tax audits with various authorities, including payment of interest and penalties; and the ability to realize deferred tax assets. Gains or losses from equity securities and interest and other could vary from expectations depending on gains or losses on the sale, exchange, change in the fair value or impairments of debt and equity investments; interest rates; cash balances; and changes in fair value of derivative instruments. Intel's results could be affected by adverse economic, social, political and physical/infrastructure conditions in countries where Intel, its customers or its suppliers operate, including military conflict and other security risks, natural disasters, infrastructure disruptions, health concerns and fluctuations in currency exchange rates. Intel's results could be affected by the timing of closing of acquisitions, divestitures and other significant transactions. Intel's results could be affected by adverse effects associated with product defects and errata (deviations from published specifications), and by litigation or regulatory matters involving intellectual property, stockholder, consumer, antitrust, disclosure and other issues. An unfavorable ruling could include monetary damages or an injunction prohibiting Intel from manufacturing or selling one or more products, precluding particular business practices, impacting Intel's ability to design its products, or requiring other remedies such as compulsory licensing of intellectual property. A detailed discussion of these and other factors that could affect Intel's results is included in Intel's SEC filings, including the company's most recent Form 10-Q, Form 10-K and earnings release.#27Configuration Information Intel® Core™ M-5Y70 Processor (up to 2.60GHz, 4T/2C, 4M Cache) On Intel Reference Platform. BIOS: v80.1 Graphics: Intel® HD Graphics (driver v. 15.36.3650) Memory: 4 GB (2x2GB) Dual Channel LPDDR3-1600 SDD: Intel® 160GB OS: Windows* 8.1 Update RTM • Prior generation: Intel® Core™ i5-4302Y (up to 2.30GHz, 4T/2C, 3M Cache) on Intel Reference Platform. 4.5W Thermal Design Power. BIOS:WTM 137 Graphics: Intel® HD Graphics (driver v. 15.36.3650) Memory: 4 GB (2x2GB) Dual Channel LPDDR3-1600 SDD: Intel® 160GB OS: Windows* 8.1 Update RTM. System Power Management Policy: Balance Wireless: On and connected. Battery size assumption: 35WHr.#28(intel) INVESTOR MEETING 2014 NOVEMBER 20 SANTA CLARA