Investor Presentaiton

II-VI/SEDI Strategic Collaboration ■ This collaboration is being driven by 5G ■ Scope of the Collaboration • Manufacture state-of-the-art GaN/SiC HEMT devices on 150 mm platform • SEDI's industry-leading HEMT device technology • II-VI's 150 mm manufacturing platform Expanding Warren, NJ device fab to add these core technologies Production ramp in 2020 in time for 5G deployments Differentiated, vertically integrated from substrates to modules • Accelerate both companies' wide-bandgap RF product roadmaps • Market leading GaN device performance, cost and scale • SEDI'S HEMT technology enables market share increase vs. Si LDMOS SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. II-VI Page 26

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