KLA Investor Conference Presentation Deck

KLA Solutions are Central to SiC Cost Reduction Improve Yield More functioning die per wafer K Technology Migration 18 KLA Non-Confidential | Unrestricted Better performance and power density (Amps/mm²) Source DH n+ p Gate n+ Drain P n+p+ Image courtesy Infineon Source Gate n+ n+ Drain n+ p+ Substrate Innovation Lower substrate costs Fewer defects Engineered SiC substrates Novel wafering processes SiC growth technologies 150-200mm Wafer Size 1.8x more die per wafer 150mm Substrate/epi inspection | Product wafer inspection | Metrology | Unit process development 200mm KLA+

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