GlobalFoundries Investor Presentation Deck
Global manufacturing footprint
Burlington, VT, USA
Fab 9
Wafer size: 200mm
Capacity: 620 kwpa
Technology: RF SOI, SiGe
East Fishkill³, NY, USA
Fab 10
Wafer size: 300mm
Capacity: 150 kwpa
Technology: HP CMOS,
RF SOI, SiPh
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CHEL
Notes:
(1) Kwpa is defined as at-four-walls thousand wafers per annum.
(2) Includes 450 kwpa planned capacity increase at new fab.
(3) We plan to transition our facility in East Fishkill to ON Semiconductor by the end of 2022.
Malta, NY, USA
Fab 8
Wafer size: 300mm
Capacity: 570 kwpa¹
Technology: FinFET, NVM,
RF SOI, SiPh
BUN
Dresden, Germany
Fab 1
Wafer size: 300mm
Capacity: 850 kwpa
Technology: FDX™,
NVM, HV, BCDLite®
Singapore²
Fab 7 / GIGA+/
New Fab 2023
Wafer size: 300 & 200mm
Capacity: 720 & 720 kwpa
Technology: BCD/BCDLite®,
HV, NVM, DDI, RF SOI,
LP SiGe
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