Micron Investor Day 2022

Winning technology strategy Executing through major technology and product transitions 6F2 3x2 DRAM Key achievements Technology cadence acceleration Multiple patterning 2D to 3D NAND (CMOS under array) NAND solutions enablement High Performance CMOS DRAM Floating gate to Replacement gate Positioned to extend leadership with future initiatives EUV, HBM Next, CXL, Next gen Al memory, High NA EUV, 3D DRAM, emerging memory CMOS = Complimentary Metal Oxide Semiconductor, High-NA EUV = High-Numerical Aperture Extreme Ultraviolet Lithography 50 Micron

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