Investor Presentaiton

Short Presentation 15th Nov. (Mon) 17:30~19:00 Time : 2min P**: Presentation Number †: : Entry to Young Researcher Poster Award P01* Yoichi Takada P02* The University of Tokyo Hydrogen Desorption Effect on Electrical Properties of Ge Epitaxial Layers on Si Akihrio Yanai The University of Tokyo Porous Si Light Scattering Effect for highly efficient thin film Si Solar Cells P03 Minoru Nakamura P04* Hitachi, Ltd., Hitachi Research Laboratory Influence of the diffusion temperature of copper on the formation of copper centers in silicon crystals Shotaro Takeuchi GeSn stressors for Ge CMOS devices P05 Toru Funaki Covalent Silicon Corporation Okayama University Dislocation motion in B-doped SiGe epifilm on Si substrate P06* Kenji Hara The University of Tokyo Local Photothermal Analysis by Atomic Force Microscopy around Grain Boundary in Multicrystalline Si Solar Cell P07 Takatoshi Shimizu P08 Okayama Prefectural University Diffusion mechanism of 3d transition metals at Si(100) surface studied by first principles calculation Koji Araki Covalent Silicon Corporation Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing P09* Satoru Komatsu Niigata University Observation of vacancy in B-doped crystalline silicon using low-temperature ultrasonic measurements P10 Takamasa Nanba Okayama Prefectural university First-principles analysis on diffusion mechanism of contamination atoms in SiO2 crystal P11 Yoshikazu TERAI Osaka university

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