#1Short Presentation 15th Nov. (Mon) 17:30~19:00 Time : 2min P**: Presentation Number †: : Entry to Young Researcher Poster Award P01* Yoichi Takada P02* The University of Tokyo Hydrogen Desorption Effect on Electrical Properties of Ge Epitaxial Layers on Si Akihrio Yanai The University of Tokyo Porous Si Light Scattering Effect for highly efficient thin film Si Solar Cells P03 Minoru Nakamura P04* Hitachi, Ltd., Hitachi Research Laboratory Influence of the diffusion temperature of copper on the formation of copper centers in silicon crystals Shotaro Takeuchi GeSn stressors for Ge CMOS devices P05 Toru Funaki Covalent Silicon Corporation Okayama University Dislocation motion in B-doped SiGe epifilm on Si substrate P06* Kenji Hara The University of Tokyo Local Photothermal Analysis by Atomic Force Microscopy around Grain Boundary in Multicrystalline Si Solar Cell P07 Takatoshi Shimizu P08 Okayama Prefectural University Diffusion mechanism of 3d transition metals at Si(100) surface studied by first principles calculation Koji Araki Covalent Silicon Corporation Effect of Oxygen Precipitation in Nitrogen-Doped Annealed Silicon Wafers on Thermal Strain Induced by Rapid Thermal Processing P09* Satoru Komatsu Niigata University Observation of vacancy in B-doped crystalline silicon using low-temperature ultrasonic measurements P10 Takamasa Nanba Okayama Prefectural university First-principles analysis on diffusion mechanism of contamination atoms in SiO2 crystal P11 Yoshikazu TERAI Osaka university#2Investigation of bandbap structure in ẞ-FeSi2 epitaxial films on Si substrate P12* Satoko NAKAGAWA Covalent Silicon Corp. Quantitative Analysis of Low-Concentration Carbon in Silicon Wafers by Luminescence Activation Using Electron Irradiation P13 Toshiro Minami Covalent Silicon Corporation Generation Mechanism of Pinhole Defects in Czochralski Silicon Single Crystal P14* Shotaro Baba P15* Niigata University Electric quadrupole effects of vacancy orbital in boron-doped silicon Takafumi Ogawa Niigata university Ab-initio evaluation of quadrupole moment associated with silicon mono-vacancy P16* Youichi Yamakawa P17 P18* P19 P20 Niigata University Effects of dynamical Jahn-Teller phonons on the charge states in a silicon vacancy Masahiro Ichino Shizuoka Institute of Science and Technology Iron impurities in n-type silicon wafer under light irradiation Takemi Yamada Niigata University Green's function approach for the electronic state in a silicon vacancy Tatsuhiko Aoki Covalent Silicon Corporation Application of the simulation of slip generation to the anneal process of silicon wafer Takuto Kojima Toyota Technological Institute Effects of Ni contamination on Electrical Properties of (110)/(100) Si Bonded Interface P21 Naoya Kawamoto P22 Yamaguchi University Growth of polycrystalline Si film at low temperature on polycarbonate substrate Yoshinori Shigematsu Okayama Prefectural University Diffusion mechanism of contaminated metals in strained Si crystals analyzed by first principles calculation P23* Tomihisa Tachibana Meiji University Influence of high temperature annealing on electrical activity at small angle grain boundaries in multi-crystalline silicon for solar cells. P24* Futoshi Okayama Institute of Space and Astronautical Science / JAXA Deep-Level Photoluminescence Analysis at Room Temperature in Small-Angle Grain Boundaries in Multicrystalline Silicon P25 Koun SHIRAI Osaka University#3Dynamics of Reorientation of Single Lattice Vacancy in Silicon Institute of Space and Astronautical Science / JAXA Photoluminescence analysis of high concentrations of donor and acceptor impurities in Si Tokyo Institute of Technology P26* Takaaki Iwai P27* Kunifumi Suzuki P28* Kazuki Okabe Direct observation of stress-induced diffusion of iron impurities in silicon Niigata University Practical evaluation of vacansy concentration in sillicon crystals and wafers by ultrasonic measurements with organic P(VDF/TrFE) transducers P29 Dong WANG P30* Kyushu University Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition Ryo Takiguchi University of Tsukuba Doping and radial distribution of boron atoms in silicon nanowires P31 Taishi Toshinori Shinshu University P32* Evaluation of oxygen-related defects in germanium crystals grown from the melt covered by B203 Munehisa Takei Meiji University Improvement of spatial resolution in Raman spectroscopy by controling measurent area P33 Haigui YANG Kyushu University Defect evaluation and control of SiGe-On-Insulator subtratre fabricated by Ge condensation technique P34 Frederic Mercier National Institute of Advanced Industrial Science and Technology Numerical investigation of the growth rate enhancement in solution growth of SiC from silicon melts. P35 Kazuaki Takata Okayama University Interaction of Si vacancies at finite temperature: A tight-binding study P36* Hiroaki Kariyazaki P37 Okayama Prefectural University Molecular simulation on interfacial structure of direct silicon bonded (110)/(100) substrates Akitaka Yoshigoe Japan Atomic Energy Agency Relationship between adsorption states and surface morphology in oxidation of Si(111)-7x7 surface at 300 K studied using real-time synchrotron radiation photoelectron spectroscopy, LEED and STM