Investor Presentaiton

Dynamics of Reorientation of Single Lattice Vacancy in Silicon Institute of Space and Astronautical Science / JAXA Photoluminescence analysis of high concentrations of donor and acceptor impurities in Si Tokyo Institute of Technology P26* Takaaki Iwai P27* Kunifumi Suzuki P28* Kazuki Okabe Direct observation of stress-induced diffusion of iron impurities in silicon Niigata University Practical evaluation of vacansy concentration in sillicon crystals and wafers by ultrasonic measurements with organic P(VDF/TrFE) transducers P29 Dong WANG P30* Kyushu University Microphotoluminescence evaluation of local strain for freestanding Si membranes with SiN deposition Ryo Takiguchi University of Tsukuba Doping and radial distribution of boron atoms in silicon nanowires P31 Taishi Toshinori Shinshu University P32* Evaluation of oxygen-related defects in germanium crystals grown from the melt covered by B203 Munehisa Takei Meiji University Improvement of spatial resolution in Raman spectroscopy by controling measurent area P33 Haigui YANG Kyushu University Defect evaluation and control of SiGe-On-Insulator subtratre fabricated by Ge condensation technique P34 Frederic Mercier National Institute of Advanced Industrial Science and Technology Numerical investigation of the growth rate enhancement in solution growth of SiC from silicon melts. P35 Kazuaki Takata Okayama University Interaction of Si vacancies at finite temperature: A tight-binding study P36* Hiroaki Kariyazaki P37 Okayama Prefectural University Molecular simulation on interfacial structure of direct silicon bonded (110)/(100) substrates Akitaka Yoshigoe Japan Atomic Energy Agency Relationship between adsorption states and surface morphology in oxidation of Si(111)-7x7 surface at 300 K studied using real-time synchrotron radiation photoelectron spectroscopy, LEED and STM

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