Investor Presentaiton

Investigation of bandbap structure in ẞ-FeSi2 epitaxial films on Si substrate P12* Satoko NAKAGAWA Covalent Silicon Corp. Quantitative Analysis of Low-Concentration Carbon in Silicon Wafers by Luminescence Activation Using Electron Irradiation P13 Toshiro Minami Covalent Silicon Corporation Generation Mechanism of Pinhole Defects in Czochralski Silicon Single Crystal P14* Shotaro Baba P15* Niigata University Electric quadrupole effects of vacancy orbital in boron-doped silicon Takafumi Ogawa Niigata university Ab-initio evaluation of quadrupole moment associated with silicon mono-vacancy P16* Youichi Yamakawa P17 P18* P19 P20 Niigata University Effects of dynamical Jahn-Teller phonons on the charge states in a silicon vacancy Masahiro Ichino Shizuoka Institute of Science and Technology Iron impurities in n-type silicon wafer under light irradiation Takemi Yamada Niigata University Green's function approach for the electronic state in a silicon vacancy Tatsuhiko Aoki Covalent Silicon Corporation Application of the simulation of slip generation to the anneal process of silicon wafer Takuto Kojima Toyota Technological Institute Effects of Ni contamination on Electrical Properties of (110)/(100) Si Bonded Interface P21 Naoya Kawamoto P22 Yamaguchi University Growth of polycrystalline Si film at low temperature on polycarbonate substrate Yoshinori Shigematsu Okayama Prefectural University Diffusion mechanism of contaminated metals in strained Si crystals analyzed by first principles calculation P23* Tomihisa Tachibana Meiji University Influence of high temperature annealing on electrical activity at small angle grain boundaries in multi-crystalline silicon for solar cells. P24* Futoshi Okayama Institute of Space and Astronautical Science / JAXA Deep-Level Photoluminescence Analysis at Room Temperature in Small-Angle Grain Boundaries in Multicrystalline Silicon P25 Koun SHIRAI Osaka University

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